Silicon Carbide
Family Overview
Silicon Carbides (SiC) exhibit characteristically high hardness, wear resistance, corrosion resistance, and strength — even at high temperatures. CoorsTek has engineered a variety of silicon carbide processes and compositions which deliver properties and features optimized for specific application requirements including:
Electrical resistivity: Careful manufacturing control can “tune” the volumetric resistivity.
Lubrication: Certain formulations have graphite embedded into the grain structure for lubrication in exchange for slightly lower flexural strength.
High purity: CoorsTek PureSiC® CVD Silicon Carbide uses chemical vapor deposition (CVD) to produce ultra- pure (>99.9995%) ceramic parts and coatings.
Direct Sintered Silicon Carbide
Direct sintered silicon carbide is extremely resistant to chemical corrosion. Combined with a high maximum use temperature and hardness allows for use in both armor and highly corrosive environment applications.
Reaction Bonded Silicon Carbide
Reaction bonded silicon carbide, sometimes referred to as siliconized silicon carbide, is a silicon metal infiltrated ceramic. The infiltration gives the material a unique combination of mechanical, thermal, and electrical properties which can be tuned to the application.
PureSiC® CVD Silicon Carbide
Chemical vapor deposition (CVD) silicon carbide resists corrosion in extreme environments while maintaining the high strength and excellent wear properties of silicon carbide. This capability, combined with the exceptional purity of 99.9995%, is helping make the ultra-clean manufacturing used in semiconductor production run faster and more efficiently.
Liquid Phase Sintered Silicon Carbide
The low porosity microstructure gives liquid phase (LP) sintered silicon carbide its excellent mechanical properties — especially hardness. This makes LP silicon carbide an outstanding material for many different machinery applications.
Ceramic Expertise
CoorsTek formulates its ceramics to maximize their unique material properties. This includes optimizing the grain size through precise grain structure control.
Our experts can utilize different manufacturing controls, like Chemical Vapor Deposition (CVD) or recrystallization, to manufacture the optimal material for the application.
Brochure Downloads
Download the Silicon Carbide Overview Brochure
Download the PureSic® Silicon Carbide: Semiconductor Applications Brochure.
Download the Semiconductor Furnace Components: Silicon Carbide Components Brochure.
| Properties | Units | CeraSiC®-B Direct Sintered |
SC-RB (SC 2) Reaction Bonded |
UltraSiC™ GI Graphite Direct Sintered |
UltraSiC™ LP Liquid Phase Sintered |
PureSiC® High Resistivity CVD |
PureSiC® Low Resistivity CVD |
|
Flexural Strength, MOR (20 °C) |
MPa | 450 | 462 | 220 | 620 | 468 | 517 |
|
Fracture Toughness, KIc |
MPa m1/2 | 3.5 | 4.0 | 3.2 | 6.0 | 3.5 | 3.5 |
|
Thermal Conductivity (20 °C) |
W/m K | 170 | 125 | 125 | 80 | 140 | 140 |
|
Coefficient of Thermal Expansion |
1x10-6/°C | 4.5 | 4.3 | 4.4 | 4.8 | 4.6 | 4.6 |
|
Maximum Use Temperature |
°C | 1500 | 1000 | 1600 | 1000 | 1600 | 1600 |
|
Dielectric Strength (6.35mm) |
ac-kV/mm | — | — | — | — | — | — |
|
Dielectric Loss (tan δ) |
1MHz, 25 °C | — | — | — | — | — | — |
|
Volume Resistivity (25°C) |
Ω-cm |
>104 |
<103 |
-105 |
— |
>105 | <0.1 |