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Semiconductor Grade AlN

Description

Semiconductor grade Aluminum Nitride (AlN) exhibits a unique combination of high thermal conductivity and electrical insulation — withstanding thermal shock and gradients while remaining highly insulative. CoorsTek has engineered multiple AlN compositions, optimized for application-drive combinations of thermal, mechanical, and electrical performance. 

Download the Semiconductor Ceramic Application Guide

Columns
Property Units Value

Grain Size

μm

5-6

Flexural Strength (MOR), 3-point

MPa

300-375

Fracture Toughness, KIc

MPa-m1/2

2.75-3.6

Coefficient of Thermal Expansion, (25°C-1000°C)

1 x 10-6/°C

502-5.5

Volume Resistivity, (25°C)

ohm-cm

1012-1014

Volume Resistivity, (500°C)

ohm-cm

109-1012

Volume Resistivity, (1000°C)

ohm-cm

107-1010

Dielectric Constant, (1 MHz)

8.5-9.05

Dielectric Loss (tan δ), (1 MHz)

2x10-4-7.7x10-3

The information provided on this chart is for general material property reference only.  The customer should recognize that exact properties of materials may vary according to product configuration but close control of values of most properties can be maintained, if specified. Nothing herein is provided, or is to be construed, as absolute engineering data or constituting a warranty or representation. Contact CoorsTek for cost-effective design, development and manufacturing assistance. CoorsTek has 300+ variations including various forming and firing processes, not all variants are represented in the present website.

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