Home

+1 303 271 7100

Contact

PureSiC® CVD SiC

Composition

SiC (CVD)

description

PureSiC® Silicon Carbide (SiC) is produced by chemical vapor deposition (CVD) — starting with pure gases to build up > 99.9995% pure monolithic SiC parts and SiC coatings layer by layer. In addition to ultra-clean processing and packaging, CoorsTek is capable of manufacturing components with precise dimensional tolerances and a surface finish less than one angstrom (1 Å RMS). CoorsTek has engineered a range of formulations to match a variety of applications with a range of volumetric resistivity — with high (HR), medium (MR), and low (LR) resistivity performance.

Download the Silicon Carbide for Advanced Semiconductor Application (PureSic CVD) brochure.

Columns
Property Units Value

Grain Size

μm

0.5-4

Flexural Strength (MOR), 3-point

MPa

-

Flexural Strength (MOR), 4-point

MPa

460-616

Fracture Toughness, KIc

MPa-m1/2

3.5-4.5

Hardness, Knoop 100gm

GPa

2750

Coefficient of Thermal Expansion, (25°C-1000°C)

1 x 10-6/°C

4.6

Thermal Conductivity

W/m*K

140-170

Volume Resistivity, (25°C)

ohm-cm

<0.1->105

Volume Resistivity, (500°C)

ohm-cm

-

Volume Resistivity, (1000°C)

ohm-cm

-

The information provided on this chart is for general material property reference only.  The customer should recognize that exact properties of materials may vary according to product configuration but close control of values of most properties can be maintained, if specified. Nothing herein is provided, or is to be construed, as absolute engineering data or constituting a warranty or representation. Contact CoorsTek for cost-effective design, development and manufacturing assistance. CoorsTek has 300+ variations including various forming and firing processes, not all variants are represented in the present website.

CONNECT WITH COORSTEK

Ask A Question

Thank you for contacting us.